SPECIFICATIONS
CL(IDD) 17 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin) 350ns(min.)
Row Active Time (tRASmin) 32ns(min.)
UL Rating 94 V - 0
Operating Temperature 0 o C to +85 o C
Storage Temperature -55 o C to +100 o C
DESCRIPTION
HyperX HX432C16FB3/8 is a 1G x 64-bit (8GB) DDR4-3200 CL16 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 1G x 8-bit FBGA components per module. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. Each module has been tested to run at DDR4-3200 at a low latency timing of 16-18-18 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• On-Die termination (ODT)
• 16 internal banks; 4 groups of 4 banks each
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Height 1.3425” (34.1mm)
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CL(IDD) 17 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin) 350ns(min.)
Row Active Time (tRASmin) 32ns(min.)
UL Rating 94 V - 0
Operating Temperature 0 o C to +85 o C
Storage Temperature -55 o C to +100 o C
DESCRIPTION
HyperX HX432C16FB3/8 is a 1G x 64-bit (8GB) DDR4-3200 CL16 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 1G x 8-bit FBGA components per module. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. Each module has been tested to run at DDR4-3200 at a low latency timing of 16-18-18 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• On-Die termination (ODT)
• 16 internal banks; 4 groups of 4 banks each
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Height 1.3425” (34.1mm)
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Технически характеристики
| Капацитет: | 8 GB |
|---|---|
| Скорост: | 3200 MT/s |
| Тип: | DDR4 |
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