SPECIFICATIONS
CL(IDD): 15 cycles
Row Cycle Time (tRCmin): 45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns(min.)
Row Active Time (tRASmin): 29.125ns(min.)
UL Rating: 94 V - 0
Operating Temperature: 0C to +85C
Storage Temperature: -55C to +100C
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• On-Die termination (ODT)
• 16 internal banks; 4 groups of 4 banks each
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Height 1.3425” (34.1mm), w/heatsink
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| Капацитет: | 4 GB |
|---|---|
| Тип: | DDR4 |
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