Памет 2GB DDR3 1600MT/s, Kingston HyperX

KHX1600C9D3/2G
2GB 256M x 64-Bit DDR3-1600MHz
CL9 240-Pin DIMM

FEATURES:

- JEDEC standard 1.5V ± 0.075V Power Supply
- VDDQ = 1.5V ± 0.075V
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 5,6,7,8,9,10
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component

PERFORMANCE:

CL(IDD) - 9 cycles
Row Cycle Time (tRCmin) - 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)- 110ns
Row Active Time (tRASmin) - 36ns (min.)
Power - 1.800 W (operating)
UL Rating - 94 V - 0
Operating Temperature - 0o C to 85o C
Storage Temperature -55o C to +100o C

http://www.valueram.com/datasheets/KHX1600C9D3_2G.pdf



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