Samsung SSD 850 EVO 2TB (MZ-75E2T0B/EU)
Samsung SSD 850 EVO 2TB, Internal 2.5", Read 540 MB/sec ,Write 520 MB/sec ,3D V-NAND
Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
- Incredible Read/Write Speeds
- Enhanced RAPID mode
- Guaranteed Endurance and reliability
Short specifications:
PRODUCT TYPE
Solid State Drive
SERIES
EVO
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
CAPACITY
2TB
* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read
* Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
COMPATIBILITY
Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux
Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)
Full specifications:
Type
PRODUCT TYPE
Solid State Drive
SERIES
EVO
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application
CONSUMER
Client PCs
Storage
CAPACITY
2TB
* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read
* Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write
* Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32):
Up to 98,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1):
Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
RANDOM WRITE SPEED
Random Write (4KB, QD32):
Up to 90,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
Random Write (4KB, QD1):
Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
COMPATIBILITY
Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux
Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)
CONTROLLER
MHX
NAND FLASH
Samsung 32 layer 3D 3-bit V-NAND
TRIM SUPPORT
Yes (Requires OS Support)
RAID SUPPORT
Y (with RAID Controller)
AES ENCRYPTION
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
DEVICE SLEEP MODE SUPPORT
Y (2mW)
General
POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
*Average: 4.0 Watts *Maximum: 4.4 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
VOLTAGE
5V ± 5% Allowable voltage
RELIABILITY (MTBF)
2 Million Hours Reliability (MTBF)
Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF
Form Factor
PRODUCT
2.5 inch Form Factor
Dimensions (W x D x H)
PRODUCT
3.94" x 2.75" x 0.27"
Weight
PRODUCT
0.14 lb.
Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-75E2T0B/AM
Виж още SSD дискове Samsung
Виж всички SSD дискове в категорията
Samsung SSD 850 EVO 2TB, Internal 2.5", Read 540 MB/sec ,Write 520 MB/sec ,3D V-NAND
Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
- Incredible Read/Write Speeds
- Enhanced RAPID mode
- Guaranteed Endurance and reliability
Short specifications:
PRODUCT TYPE
Solid State Drive
SERIES
EVO
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
CAPACITY
2TB
* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read
* Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
COMPATIBILITY
Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux
Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)
Full specifications:
Type
PRODUCT TYPE
Solid State Drive
SERIES
EVO
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application
CONSUMER
Client PCs
Storage
CAPACITY
2TB
* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read
* Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write
* Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32):
Up to 98,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1):
Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
RANDOM WRITE SPEED
Random Write (4KB, QD32):
Up to 90,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
Random Write (4KB, QD1):
Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
COMPATIBILITY
Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux
Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)
CONTROLLER
MHX
NAND FLASH
Samsung 32 layer 3D 3-bit V-NAND
TRIM SUPPORT
Yes (Requires OS Support)
RAID SUPPORT
Y (with RAID Controller)
AES ENCRYPTION
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
DEVICE SLEEP MODE SUPPORT
Y (2mW)
General
POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
*Average: 4.0 Watts *Maximum: 4.4 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
VOLTAGE
5V ± 5% Allowable voltage
RELIABILITY (MTBF)
2 Million Hours Reliability (MTBF)
Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF
Form Factor
PRODUCT
2.5 inch Form Factor
Dimensions (W x D x H)
PRODUCT
3.94" x 2.75" x 0.27"
Weight
PRODUCT
0.14 lb.
Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-75E2T0B/AM
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Технически характеристики
| Капацитет: | 2000 GB |
|---|---|
| Интерфейс: | SATAIII 6Gb/s |
| Монтаж: | Вътрешни |
| Размер: | 2.5" (6.35 cm) |
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