HUSMR1610ASS200
Highlights
• MLC NAND Flash for ultra-high performance and
endurance
• Read-intensive <3DW/D for 5 years
• Best IOPS/Watt for reduced TCO
• 12Gb/s SAS interface for maximum throughput
• Advanced power loss data management technology
• Self-encrypting models conform to TCG’s Enterprise
specification
Applications/Environments
• Ultra-high performance tier-0 read
endurance enterprise storage
• Enterprise-class servers and high performance computing
• Space and/or power constrained environments
• Online Transaction Processing (OLTP)
• Video pre- and post-production
• Cloud computing
Configuration
Interface SAS 12Gb/s
Capacity (GB) at 512 bytes/sector 1000 GB
Form factor 2.5-inch
Flash memory technology Multi Level Cell (MLC)
Sector size support 512, 520, 528, 4K
Performance
Read throughput (max MB/s, sequential 64K) 1100
Write throughput (max MB/s, sequential 64K) 700
Read IOPS (max IOPS, random 4K) 130,000
Write IOPS (max IOPS, random 4k) 30,000
Reliability
Error rate (non-recoverable bits read) 1 in 1017
MTBF2
(M hours) 2.5
Annual failure rate
(AFR) 0.35%
Availability (hrs/day x days/wk) 24x7
Endurance (max PB1
, random write) 10.5 / 5.8 / 4.8 / 2.92 / 2.4 / 1.46 / 1.2
Power
Requirement +5 VDC (+/-5%)
+12 VDC (+/-5%)
Operating (W, typical) 9.0 and 11.0
Idle (W) 2.2
Physical
z-height (mm) 15.0
Dimensions (width x depth, mm) 70.1 x 100.6
Weight (g, max) 187
Environmental (operating)
Case temperature 0º to 70ºC
Shock (half-sine wave) 1000G (0.5ms)
500G (2ms)
Vibration, random (G RMS) 2.16, all axis (5 to 700 Hz)
JAR Computers може да предложи ремонт/смяна/монтаж в наш сервиз или при партньор.
Виж още SSD дискове HGST
Виж всички SSD дискове в категорията
| Капацитет: | 1000 GB |
|---|---|
| Интерфейс: | SAS3 12 Gbit/s |
| Монтаж: | Вътрешни |
| Размер: | 2.5" (6.35 cm) |
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