Памет SSD 1TB, Samsung 9100 Pro (Разопакован продукт), NVMe, M.2 (2280), скорост на четене до 14700MB/s, скорост на запис до 13300MB/s

Samsung 9100 Pro

Breakthrough PCIe 5.0 performance

Push PCIe 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/ 13,400 MB/s, two times faster than 990 PRO*. Leave Gen4 limits behind with random read/write speeds up to 2,200K/ 2,600K IOPS, made possible by Gen5.

Every task, powerfully parallel

Speed past productivity limits. Exhilarating random read/ write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.

Create with AI

Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PRO’s exhilarating random read/write speeds up to 2,200K/ 2,600K IOPS*. Swift loads, smooth gameplay, seamless performance.

Exceptional experience

Elevate your competitive edge. Breeze through video editing, 3D art, and streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on compatible devices, and choose the storage you need with expansive capacity up to 8TB*.

Extraordinary thermal efficiency

Consistent peak performance. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO*. Exceptional thermal control minimises disruption, so you can keep the most demanding programs running with the max possible power of PCIe 5.0.

Specifications

General Feature

• Application Client PCs, Game Consoles
• Rated Capacity 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
• Form Factor M.2 (2280)
• Interface PCIe 5.0 x4, NVMe 2.0
• Dimension (WxHxD) Max 80.15 x Max 22.15 x Max 2.38 mm
• Weight Max 9.0g Weight
• Storage Memory Samsung V-NAND TLC
• Controller Samsung in-house Controller
• Cache Memory Samsung 1GB Low Power DDR4X SDRAM

Special Feature

• TRIM Support Supported
• S.M.A.R.T Support Supported
• GC (Garbage Collection) Auto Garbage Collection Algorithm
• Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• WWN Support Not supported
• Device Sleep Mode Support Yes

Performance

• Sequential Read Up to 14,700 MB/s * Performance may vary based on system hardware & configuration
• Sequential Write Up to 13,300 MB/s * Performance may vary based on system hardware & configuration
• Random Read Up to 1,850,000 IOPS * Performance may vary based on system hardware & configuration
• Random Write Up to 2,600,000 IOPS * Performance may vary based on system hardware & configuration

Environment

• Average Power Consumption (system level) Average: Read 7.6 W / Write 7.2 W* Actual power consumption may vary depending on system hardware & configuration
• Power consumption (Idle) Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
• Power Consumption (Device Sleep) Typical 3.3 mW * Actual power consumption may vary depending on system hardware & configuration
• Allowable Voltage 3.3 V ± 5 % Allowable voltage
• Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
• Operating Temperature 0 - 70 ℃ Operating Temperature
• Shock 1,500 G & 0.5 ms (Half sine)

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