Samsung 9100 Pro
Breakthrough PCIe 5.0 performance
Push PCIe 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/ 13,400 MB/s, two times faster than 990 PRO*. Leave Gen4 limits behind with random read/write speeds up to 2,200K/ 2,600K IOPS, made possible by Gen5.

Every task, powerfully parallel
Speed past productivity limits. Exhilarating random read/ write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.

Create with AI
Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PRO’s exhilarating random read/write speeds up to 2,200K/ 2,600K IOPS*. Swift loads, smooth gameplay, seamless performance.

Exceptional experience
Elevate your competitive edge. Breeze through video editing, 3D art, and streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on compatible devices, and choose the storage you need with expansive capacity up to 8TB*.

Extraordinary thermal efficiency
Consistent peak performance. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO*. Exceptional thermal control minimises disruption, so you can keep the most demanding programs running with the max possible power of PCIe 5.0.

Specifications
General Feature
- Application Client PCs, Game Consoles
- Rated Capacity 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Form Factor M.2 (2280)
- Interface PCIe 5.0 x4, NVMe 2.0
- Dimension (WxHxD) Max 80.15 x Max 22.15 x Max 2.38 mm
- Weight Max 9.0g Weight
- Storage Memory Samsung V-NAND TLC
- Controller Samsung in-house Controller
- Cache Memory Samsung 1GB Low Power DDR4X SDRAM
Special Feature
- TRIM Support Supported
- S.M.A.R.T Support Supported
- GC (Garbage Collection) Auto Garbage Collection Algorithm
- Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
- WWN Support Not supported
- Device Sleep Mode Support Yes
Performance
- Sequential Read Up to 14,700 MB/s * Performance may vary based on system hardware & configuration
- Sequential Write Up to 13,300 MB/s * Performance may vary based on system hardware & configuration
- Random Read Up to 1,850,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write Up to 2,600,000 IOPS * Performance may vary based on system hardware & configuration
Environment
- Average Power Consumption (system level) Average: Read 7.6 W / Write 7.2 W* Actual power consumption may vary depending on system hardware & configuration
- Power consumption (Idle) Typical 4 mW * Actual power consumption may vary depending on system hardware & configuration
- Power Consumption (Device Sleep) Typical 3.3 mW * Actual power consumption may vary depending on system hardware & configuration
- Allowable Voltage 3.3 V ± 5 % Allowable voltage
- Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
- Operating Temperature 0 - 70 ℃ Operating Temperature
- Shock 1,500 G & 0.5 ms (Half sine)
JAR Computers може да предложи ремонт/смяна/монтаж в наш сервиз или при партньор.
Виж още SSD дискове Samsung
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| Капацитет: | 1000 GB |
|---|---|
| Интерфейс: | NVMe |
| Монтаж: | Вътрешни |
| Размер: | M.2 (2280) |
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