Kingston KVR21S15S8/4BK
This document describes ValueRAM's 512M x 64-bit (4GB) DDR4-2133 CL15 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 1.2V. This 260-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
CL(IDD) : 15 cycles
Row Cycle Time (tRCmin) : 46.5ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin) :260ns(min.)
Row Active Time (tRASmin) : 33ns(min.)
Maximum Operating Power :TBD W*
UL Rating : 94 V - 0
Operating Temperature : 0C to +85C
Storage Temperature: : -55C to +100C
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This document describes ValueRAM's 512M x 64-bit (4GB) DDR4-2133 CL15 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2133 timing of 15-15-15 at 1.2V. This 260-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
CL(IDD) : 15 cycles
Row Cycle Time (tRCmin) : 46.5ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin) :260ns(min.)
Row Active Time (tRASmin) : 33ns(min.)
Maximum Operating Power :TBD W*
UL Rating : 94 V - 0
Operating Temperature : 0C to +85C
Storage Temperature: : -55C to +100C
JAR Computers може да предложи ремонт/смяна/монтаж в наш сервиз или при партньор.
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Технически характеристики
| Тип: | DDR4 SO-DIMM |
|---|---|
| Капацитет: | 4 GB |
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Свързани продукти
Памет 512MB DDR2 533Mhz, SO DIMM7.38 €
/14.42 лв
Памет 4GB DDR3, 1600MT/s, SO-DIMM, Silicon Power SP004GBSTU160N02, 1.5V17.95 €
/35.12 лв
Памет 1GB DDR2 667Mhz, SO DIMM19.46 €
/38.06 лв

