Памет 8GB DDR3 1600MHz, Kingston KVR16N11/8BK, bulk(без опаковка), 1.5V

8GB DDR3 1600MHz, Kingston , bulk(без опаковка), 1.5V
KVR16N11/8BK


Features
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal banks
• Programmable CAS latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
• Asynchronous Reset
• PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)


SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
11 cycles
48.125ns(min.)
260ns(min.)
35ns(min.)
TBD W*
94 V - 0
0o
C to +85o
C
-55o
C to +100o
C


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