Samsung 850 EVO SATA III 2.5inch SSD 4TB
MZ-75E4T0B/EU
Samsung V-NAND technology
Up to 540MB/s sequential read and 520MB/s write
Untap your computer's potential
The Samsung SSD 850 EVO elevates the everyday computing experience to a higher level of performance and endurance than was ever imagined. Powered by Samsung's unmatched V-NAND technology, no wonder the 850 EVO is the best-selling* SSD for everyday computing. Designed for mainstream desktop PCs and laptops, the 850 EVO comes in a wide range of capacities and form factors.
Uncompromised performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode further boosts performance for up to 2x faster* data processing speeds on a system level by utilizing unused PC memory as cache storage.
Form Factor
2.5 inch
Capacity
4,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD)
100 X 69.85 X 6.8 (mm)
Weight
Max 55.0 g
NAND Type
Samsung V-NAND
Controller
Samsung MHX Controller
Cache Memory
Samsung 4 GB Low Power DDR3
Special Feature
TRIM Support
TRIM Supported
S.M.A.R.T Support
S.M.A.R.T Supported
GC (Garbage Collection)
Auto Garbage Collection Algorithm
Encryption Support
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Performance
Sequential Read
Up to 540 MB/s * Performance may vary based on system hardware & configuration
Sequential Write
Up to 520 MB/s * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD32)
Up to 98,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32)
Up to 90,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD1)
Up to 10,000 IOPS Performance may vary based on system hardware & configuration
Random Write (4 KB, QD1)
Up to 40,000 IOPS * Performance may vary based on system hardware & configuration
Environment
Power Consumption
*Average: 3.6 W *Maximum:5.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)
Operating Temperature
0 - 70 ℃ Operating Temperature
Shock
1,500 G & 0.5 ms (Half sine)
Виж още SSD дискове Samsung
Виж всички SSD дискове в категорията
MZ-75E4T0B/EU
Samsung V-NAND technology
Up to 540MB/s sequential read and 520MB/s write
Untap your computer's potential
The Samsung SSD 850 EVO elevates the everyday computing experience to a higher level of performance and endurance than was ever imagined. Powered by Samsung's unmatched V-NAND technology, no wonder the 850 EVO is the best-selling* SSD for everyday computing. Designed for mainstream desktop PCs and laptops, the 850 EVO comes in a wide range of capacities and form factors.
Uncompromised performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode further boosts performance for up to 2x faster* data processing speeds on a system level by utilizing unused PC memory as cache storage.
Form Factor
2.5 inch
Capacity
4,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD)
100 X 69.85 X 6.8 (mm)
Weight
Max 55.0 g
NAND Type
Samsung V-NAND
Controller
Samsung MHX Controller
Cache Memory
Samsung 4 GB Low Power DDR3
Special Feature
TRIM Support
TRIM Supported
S.M.A.R.T Support
S.M.A.R.T Supported
GC (Garbage Collection)
Auto Garbage Collection Algorithm
Encryption Support
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Performance
Sequential Read
Up to 540 MB/s * Performance may vary based on system hardware & configuration
Sequential Write
Up to 520 MB/s * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD32)
Up to 98,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32)
Up to 90,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD1)
Up to 10,000 IOPS Performance may vary based on system hardware & configuration
Random Write (4 KB, QD1)
Up to 40,000 IOPS * Performance may vary based on system hardware & configuration
Environment
Power Consumption
*Average: 3.6 W *Maximum:5.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)
Operating Temperature
0 - 70 ℃ Operating Temperature
Shock
1,500 G & 0.5 ms (Half sine)
JAR Computers може да предложи ремонт/смяна/монтаж в наш сервиз или при партньор.
Виж още SSD дискове Samsung
Виж всички SSD дискове в категорията
Технически характеристики
| Капацитет: | 4000 GB |
|---|---|
| Интерфейс: | SATAIII 6Gb/s |
| Монтаж: | Вътрешни |
| Размер: | 2.5" (6.35 cm) |
Добави Ревю / Въпрос
Оцени продукта или задай въпрос?
- 5
0 ревюта
- 4
0 ревюта
- 3
0 ревюта
- 2
0 ревюта
- 1
0 ревюта
Свързани продукти
Памет SSD 128GB Apacer AS350X, SATA 6Gb/s, 2.5" (6.35 cm), скорост на четене 560 MB/s, скорост на запис 540 MB/s46.68 лв
/23.87 €
Памет SSD 128GB Silicon Power A55, SATA 6Gb/s, M.2 (2280), скорост на четене 560MB/s, скорост на запис 530MB/s53.56 лв
/27.39 €
Памет SSD 128GB, Verbatim Dual QuickStick, USB 3.2 Gen 1 Type-A/C, външна, скорост на четене до 510MB/s, скорост на запис до 460MB/s54.90 лв
/28.07 €