Памет SSD 4TB Samsung 850 EVO MZ-75E4T0B/EU, SATA 6Gb/s, 2.5"(6.35 cm), скорост на четене 540MB/s, скорост на запис 520MB/s

Samsung 850 EVO SATA III 2.5inch SSD 4TB
MZ-75E4T0B/EU

Samsung V-NAND technology
Up to 540MB/s sequential read and 520MB/s write

Untap your computer's potential

The Samsung SSD 850 EVO elevates the everyday computing experience to a higher level of performance and endurance than was ever imagined. Powered by Samsung's unmatched V-NAND technology, no wonder the 850 EVO is the best-selling* SSD for everyday computing. Designed for mainstream desktop PCs and laptops, the 850 EVO comes in a wide range of capacities and form factors.

Uncompromised performance

The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode further boosts performance for up to 2x faster* data processing speeds on a system level by utilizing unused PC memory as cache storage.

Form Factor
2.5 inch

Capacity
4,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Dimension (WxHxD)
100 X 69.85 X 6.8 (mm)

Weight
Max 55.0 g

NAND Type
Samsung V-NAND

Controller
Samsung MHX Controller

Cache Memory
Samsung 4 GB Low Power DDR3

Special Feature
TRIM Support
TRIM Supported
S.M.A.R.T Support
S.M.A.R.T Supported
GC (Garbage Collection)
Auto Garbage Collection Algorithm

Encryption Support
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

WWN Support
World Wide Name supported

Device Sleep Mode Support
Yes

Performance

Sequential Read
Up to 540 MB/s * Performance may vary based on system hardware & configuration
Sequential Write
Up to 520 MB/s * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD32)
Up to 98,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32)
Up to 90,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4 KB, QD1)
Up to 10,000 IOPS Performance may vary based on system hardware & configuration
Random Write (4 KB, QD1)
Up to 40,000 IOPS * Performance may vary based on system hardware & configuration

Environment
Power Consumption
*Average: 3.6 W *Maximum:5.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration

Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)

Operating Temperature
0 - 70 ℃ Operating Temperature

Shock
1,500 G & 0.5 ms (Half sine)

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