Samsung 9100 Pro
Breakthrough PCIe 5.0 performance
Push PCIe 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/ 13,400 MB/s, two times faster than 990 PRO*. Leave Gen4 limits behind with random read/write speeds up to 2,200K/ 2,600K IOPS, made possible by Gen5.

Every task, powerfully parallel
Speed past productivity limits. Exhilarating random read/ write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.

Create with AI
Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PRO’s exhilarating random read/write speeds up to 2,200K/ 2,600K IOPS*. Swift loads, smooth gameplay, seamless performance.

Exceptional experience
Elevate your competitive edge. Breeze through video editing, 3D art, and streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on compatible devices, and choose the storage you need with expansive capacity up to 8TB*.

Extraordinary thermal efficiency
Consistent peak performance. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO*. Exceptional thermal control minimises disruption, so you can keep the most demanding programs running with the max possible power of PCIe 5.0.

Specifications
General Feature
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe® 5.0 x4, NVMe™ 2.0
DIMENSION (WxHxD)
8TB : 80.15 x 22.15 x 3.88 mmWEIGHT
8TB : Max 9.5g WeightSTORAGE MEMORY
Samsung V-NAND TLC
CONTROLLER
Samsung in-house Controller
CACHE MEMORY
Samsung 8GB Low Power DDR4X SDRAM (8TB)
Special Feature
TRIM Support
Supported
S.M.A.R.T Support
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal
IEEE1667 (Encrypted drive)DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
SEQUENTIAL READ
8TB: Up to 14,800 MB/s (TBD)SEQUENTIAL WRITE
8TB: Up to 13,400 MB/s (TBD)RANDOM READ (4KB, QD32)
8TB: Up to 2,200,000 IOPS (TBD)RANDOM WRITE (4KB, QD32)
8TB: Up to 2,600,000 IOPS (TBD)
Environment
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
OPERATING TEMPERATURE
0 - 70 ℃ Operating Temperature
Shock
1,500 G & 0.5 ms (Half sine)
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Капацитет: | 8000 GB |
---|---|
Интерфейс: | NVMe |
Монтаж: | Вътрешни |
Размер: | M.2 (2280) |
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