Kingston 8GB DDR4 PC4-21300
KVR26N19S8/8
This document describes ValueRAM's KVR26N19S8/8 is a 1G x 64-bit
(8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8,
memory module, based on eight 1G x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR4-2666 timing of
19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
SPECIFICATIONS
CL(IDD) 19 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 32ns(min.)
Maximum Operating Power TBD W*
UL Rating 94 V - 0
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KVR26N19S8/8
This document describes ValueRAM's KVR26N19S8/8 is a 1G x 64-bit
(8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8,
memory module, based on eight 1G x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR4-2666 timing of
19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
SPECIFICATIONS
CL(IDD) 19 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 32ns(min.)
Maximum Operating Power TBD W*
UL Rating 94 V - 0
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Документация
Технически характеристики
| Капацитет: | 8 GB |
|---|---|
| Скорост: | 2666 MT/s |
| Тип: | DDR4 |
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