HyperX Fury 32GB(2x 16GB)
HX426C16FBK2/32
HyperX HX426C16FBK2/32 is a kit of two 2G x 64-bit (16GB)
DDR4-2666 CL16 SDRAM (Synchronous DRAM) 2Rx8, memory
module, based on sixteen 1G x 8-bit FBGA components per module.
Each module kit supports Intel® Extreme Memory Profiles
(Intel® XMP) 2.0. Total kit capacity is 32GB. Each module has
been tested to run at DDR4-2666 at a low latency timing of 16-18-18
at 1.2V. Additional timing parameters are shown in the
Plug-N-Play (PnP) Timing Parameters section below.
CL(IDD) 16 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 29.25ns(min.)
Maximum Operating Power TBD W
UL Rating 94 V - 0
Operating Temperature 0 C to +85o C
Storage Temperature -55o C to +100o C
FEATURES
Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsink
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HX426C16FBK2/32
HyperX HX426C16FBK2/32 is a kit of two 2G x 64-bit (16GB)
DDR4-2666 CL16 SDRAM (Synchronous DRAM) 2Rx8, memory
module, based on sixteen 1G x 8-bit FBGA components per module.
Each module kit supports Intel® Extreme Memory Profiles
(Intel® XMP) 2.0. Total kit capacity is 32GB. Each module has
been tested to run at DDR4-2666 at a low latency timing of 16-18-18
at 1.2V. Additional timing parameters are shown in the
Plug-N-Play (PnP) Timing Parameters section below.
CL(IDD) 16 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 29.25ns(min.)
Maximum Operating Power TBD W
UL Rating 94 V - 0
Operating Temperature 0 C to +85o C
Storage Temperature -55o C to +100o C
FEATURES
Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsink
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Виж всички Настолни компютри Памети в категорията
Технически характеристики
| Капацитет: | 32 (2x16) GB |
|---|---|
| Тип: | DDR4 |
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