The Samsung SSD 850 EVO. The top SSD for top professionals.
-Product Type M.2
-Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
-Capacity
250 GB (1GB=1 Billionbyte by IDEMA) *
Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
-Sequential Read Speed
Up to 540 MB/sec Sequential Read *
Performance may vary based on system hardware & configuration
-Memory Speed
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Performance:
Solid-state drive capacity: 250 GB
Solid-state drive interface: M.2
Read speed: 540 MB/s
Write speed: 500 MB/s
Data transfer rate: 6 Gbit/s
Random read (4KB): 97000 IOPS
Random write (4KB): 89000 IOPS
Security algorithms: 256-bit AES
S.M.A.R.T. support
TRIM support
Sequential writing
Mean time between failures (MTBF): 1500000 h
TBW rating: 75
Operating voltage: 5 V
Technical details
Operating temperature (T-T): 0 - 70°C
Weight & dimensions
Width: 80.3 mm
Depth: 15.2 mm
Height: 22.1 mm
Weight: 122 g
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-Product Type M.2
-Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
-Capacity
250 GB (1GB=1 Billionbyte by IDEMA) *
Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
-Sequential Read Speed
Up to 540 MB/sec Sequential Read *
Performance may vary based on system hardware & configuration
-Memory Speed
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Performance:
Solid-state drive capacity: 250 GB
Solid-state drive interface: M.2
Read speed: 540 MB/s
Write speed: 500 MB/s
Data transfer rate: 6 Gbit/s
Random read (4KB): 97000 IOPS
Random write (4KB): 89000 IOPS
Security algorithms: 256-bit AES
S.M.A.R.T. support
TRIM support
Sequential writing
Mean time between failures (MTBF): 1500000 h
TBW rating: 75
Operating voltage: 5 V
Technical details
Operating temperature (T-T): 0 - 70°C
Weight & dimensions
Width: 80.3 mm
Depth: 15.2 mm
Height: 22.1 mm
Weight: 122 g
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Документация
Технически характеристики
Капацитет: | 250 GB |
---|---|
Интерфейс: | SATAIII 6Gb/s |
Монтаж: | Вътрешни |
Размер: | M.2 (2280) |
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