Памет 2GB DDR3 1600MT/s, Kingston

KVR16N11S6/2
2GB 1Rx16 256M x 64-Bit PC3-12800
CL11 240-Pin DIMM

- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), single sided component

SPECIFICATIONS

- CL(IDD) 11 cycles
- Row Cycle Time (tRCmin) 48.125ns (min.)
- Refresh to Active/Refresh 260ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin) 35ns (min.)
- Maximum Operating Power 1.170 W*
- UL Rating 94 V - 0
- Operating Temperature 0oC to 85oC
- Storage Temperature -55oC to +100oC

*Power will vary depending on the SDRAM used.



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