Name: Памет 8GB DDR4 2666 MT/s, HyperX HX426C16FB2/8, 1.2V - 0.00 лв. (≈ 0.00 EUR)
Brand: HyperX
SKU: MRAMHYPERXHX426C16FB28
Availability: OutOfStock

Описание Характеристики Ревюта / Въпроси

HyperX HX426C16FB2/8 8GB DDR4 2666MHz

HyperX HX426C16FB2/8 is a 1G x 64-bit (8GB) DDR4-2666 CL16
SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 1G x 8-bit FBGA components per module.
Each module supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0.
Each module has been tested to run at DDR4-2666 at a low latency timing of 16-18-18 at 1.2V.
Additional timing parameters are shown in the Plug-N-Play (PnP) Timing Parameters section below.
The JEDEC standard electrical and mechanical specifications are as follows:

Features:
Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/o heatsink

SPECIFICATIONS

CL(IDD) 16 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 29.25ns(min.)
Maximum Operating Power TBD W*
UL Rating 94 V - 0

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