Samsung SSD 850 EVO mSATA 1TB Read 540 MB/sec, Write 520 MB/sec, 3D V-NAND
SSD 1TB Samsung 850 EVO (MZ-M5E1T0BW), mSATA
The Samsung SSD 850 EVO. The top SSD for top professionals.
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
- TurboWrite Technology
- RAPID Mode
- Enhanced Endurance and Reliability
Short specifications:
PRODUCT TYPE
mSATA
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
Full specifications
Type
PRODUCT TYPE
mSATA
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application
CONSUMER
Client PCs
Storage
CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
RANDOM WRITE SPEED
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration
Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
CONTROLLER
Samsung MEX Controller
TRIM SUPPORT
Yes
AES ENCRYPTION
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
S.M.A.R.T. SUPPORT
Yes
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
WWN SUPPORT
World Wide Name supported
DEVICE SLEEP MODE SUPPORT
Yes
General
POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
Average: 4.3 Watts *Maximum: 5.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
VOLTAGE
5V ± 5% Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF
SHOCK
1,500G & 0.5ms (Half sine)
Form Factor
PRODUCT
mSATA
Dimensions (W x D x H)
PRODUCT
1.18" x 2" x 0.15"
Weight
PRODUCT
0.02 lb.
Software
MANAGEMENT SW
Magician Software
Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-M5E1T0BW
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SSD 1TB Samsung 850 EVO (MZ-M5E1T0BW), mSATA
The Samsung SSD 850 EVO. The top SSD for top professionals.
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
- TurboWrite Technology
- RAPID Mode
- Enhanced Endurance and Reliability
Short specifications:
PRODUCT TYPE
mSATA
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
Full specifications
Type
PRODUCT TYPE
mSATA
INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application
CONSUMER
Client PCs
Storage
CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
RANDOM WRITE SPEED
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration
Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM
CONTROLLER
Samsung MEX Controller
TRIM SUPPORT
Yes
AES ENCRYPTION
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
S.M.A.R.T. SUPPORT
Yes
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
WWN SUPPORT
World Wide Name supported
DEVICE SLEEP MODE SUPPORT
Yes
General
POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
Average: 4.3 Watts *Maximum: 5.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
VOLTAGE
5V ± 5% Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF
SHOCK
1,500G & 0.5ms (Half sine)
Form Factor
PRODUCT
mSATA
Dimensions (W x D x H)
PRODUCT
1.18" x 2" x 0.15"
Weight
PRODUCT
0.02 lb.
Software
MANAGEMENT SW
Magician Software
Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-M5E1T0BW
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Документация
Технически характеристики
Капацитет: | 1000 GB |
---|---|
Интерфейс: | SATAIII 6Gb/s |
Монтаж: | Вътрешни |
Размер: | mSATA |
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