Памет SSD 1TB Samsung 850 EVO, SATA 6Gb/s, mSATA, скорост на четене 540MB/s, скорост на запис 520MB/s

Samsung SSD 850 EVO mSATA 1TB Read 540 MB/sec, Write 520 MB/sec, 3D V-NAND

SSD 1TB Samsung 850 EVO (MZ-M5E1T0BW), mSATA

The Samsung SSD 850 EVO. The top SSD for top professionals.

3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

- TurboWrite Technology
- RAPID Mode
- Enhanced Endurance and Reliability


Short specifications:

PRODUCT TYPE
mSATA

INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration

SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration

MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM


Full specifications

Type

PRODUCT TYPE
mSATA

INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application

CONSUMER
Client PCs
Storage

CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features

SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration

SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration

RANDOM READ SPEED
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration

Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration

RANDOM WRITE SPEED
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration

Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration


MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM

CONTROLLER
Samsung MEX Controller

TRIM SUPPORT
Yes

AES ENCRYPTION
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)

S.M.A.R.T. SUPPORT
Yes

GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm

WWN SUPPORT
World Wide Name supported

DEVICE SLEEP MODE SUPPORT
Yes


General

POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration

Average: 4.3 Watts *Maximum: 5.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration

VOLTAGE
5V ± 5% Allowable voltage

RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)

Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF

SHOCK
1,500G & 0.5ms (Half sine)

Form Factor
PRODUCT
mSATA

Dimensions (W x D x H)
PRODUCT
1.18" x 2" x 0.15"

Weight
PRODUCT
0.02 lb.

Software
MANAGEMENT SW
Magician Software

Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-M5E1T0BW




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