SSD 2TB Samsung MZ-75E2T0B/EU
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Памет SSD 2TB Samsung 850 EVO (MZ-75E2T0B/EU), SATA 6Gb/s, 2.5" (6.35 cm), скорост на четене 540MB/s, скорост на запис 520MB/s

id 71562 Код: SSDSAMSUNGMZ75E2T0BEU
  • Модел: SSD 850 EVO 2TB (MZ-75E2T0B/EU)
  • Марка: Samsung
  • Гаранция: 60 месеца
  • Код на продукта: MZ-75E2T0B/EU
  • Капацитет: 2000 GB
  • Интерфейс: SATAIII 6Gb/s
  • Монтаж: Вътрешни
  • Размер: 2.5" (6.35 cm)
  • Наличност: Стар продукт
    ОписаниеХарактеристикиРевюта / Въпроси
    Samsung SSD 850 EVO 2TB (MZ-75E2T0B/EU)

    Samsung SSD 850 EVO 2TB, Internal 2.5", Read 540 MB/sec ,Write 520 MB/sec ,3D V-NAND

    Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.


    3D V-NAND Technology
    Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

    - Incredible Read/Write Speeds
    - Enhanced RAPID mode
    - Guaranteed Endurance and reliability


    Short specifications:

    PRODUCT TYPE
    Solid State Drive

    SERIES
    EVO

    INTERFACE
    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

    CAPACITY
    2TB
    * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

    SEQUENTIAL READ SPEED
    Up to 540 MB/sec Sequential Read
    * Performance may vary based on system hardware & configuration

    SEQUENTIAL WRITE SPEED
    Up to 520 MB/sec Sequential Write
    * Performance may vary based on system hardware & configuration

    MEMORY SPEED
    Samsung 32 layer 3D V-NAND
    Samsung 1GB Low Power DDR2 SDRAM

    COMPATIBILITY
    Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux

    Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)


    Full specifications:

    Type

    PRODUCT TYPE
    Solid State Drive

    SERIES
    EVO

    INTERFACE
    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

    Application
    CONSUMER
    Client PCs

    Storage
    CAPACITY
    2TB
    * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)


    Key Features
    SEQUENTIAL READ SPEED
    Up to 540 MB/sec Sequential Read
    * Performance may vary based on system hardware & configuration

    SEQUENTIAL WRITE SPEED
    Up to 520 MB/sec Sequential Write
    * Performance may vary based on system hardware & configuration

    RANDOM READ SPEED
    Random Read (4KB, QD32):
    Up to 98,000 IOPS Random Read
    * Performance may vary based on system hardware & configuration

    Random Read (4KB, QD1):
    Up to 10,000 IOPS Random Read
    * Performance may vary based on system hardware & configuration

    RANDOM WRITE SPEED
    Random Write (4KB, QD32):
    Up to 90,000 IOPS Random Write
    * Performance may vary based on system hardware & configuration

    Random Write (4KB, QD1):
    Up to 40,000 IOPS Random Write
    * Performance may vary based on system hardware & configuration

    MEMORY SPEED
    Samsung 32 layer 3D V-NAND
    Samsung 1GB Low Power DDR2 SDRAM

    COMPATIBILITY
    Hardware Compatibility: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux

    Software Compability: Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista (SP1 and above), XP (SP2 and above), Windows Server 2008 (32-bit and 64-bit), Windows Server 2003 (32-bit and 64-bit with SP2 and above)

    CONTROLLER
    MHX

    NAND FLASH
    Samsung 32 layer 3D 3-bit V-NAND

    TRIM SUPPORT
    Yes (Requires OS Support)

    RAID SUPPORT
    Y (with RAID Controller)

    AES ENCRYPTION
    AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)

    DEVICE SLEEP MODE SUPPORT
    Y (2mW)


    General

    POWER CONSUMPTION (W)
    50 mWatts
    * Actual power consumption may vary depending on system hardware & configuration
    *Average: 4.0 Watts *Maximum: 4.4 Watts (Burst mode)
    * Actual power consumption may vary depending on system hardware & configuration

    VOLTAGE
    5V ± 5% Allowable voltage

    RELIABILITY (MTBF)
    2 Million Hours Reliability (MTBF)


    Environmental Specs

    OPERATING TEMPERATURE
    32ºF - 158ºF


    Form Factor
    PRODUCT
    2.5 inch Form Factor

    Dimensions (W x D x H)
    PRODUCT
    3.94" x 2.75" x 0.27"

    Weight
    PRODUCT
    0.14 lb.

    Допълнителна информация: http://www.samsung.com/us/computer/memory-storage/MZ-75E2T0B/AM


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    Технически характеристики

    Капацитет:  2000 GB
    Интерфейс:  SATAIII 6Gb/s
    Монтаж:  Вътрешни
    Размер:  2.5" (6.35 cm)

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